25 Gbaud VCSEL with Reduced Temperature Dependence
Paper in proceeding, 2024
We present the design and performance of a 25 Gbaud 850 nm VCSEL with reduced temperature dependence of threshold current and modulation bandwidth from -40 to 125 degrees Celsius using different composition InGaAs QWs in the active region to spectrally broaden the optical gain.
dynamics
vertical-cavity surface-emitting laser
temperature dependence
Author
Hans Kaimre
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Alexander Grabowski
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
ILOOMINA
Johan Gustavsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
NVIDIA
Anders Larsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
NVIDIA
Conference Digest - IEEE International Semiconductor Laser Conference
08999406 (ISSN)
9798350372991 (ISBN)
29th IEEE International Semiconductor Laser Conference, ISLC 2024
Orlando, USA,
Orlando, USA,
Hot-Optics
Swedish Foundation for Strategic Research (SSF) (CHI19-0004), 2021-01-01 -- 2025-12-31.
Subject Categories
Telecommunications
Atom and Molecular Physics and Optics
Condensed Matter Physics
DOI
10.1109/ISLC57752.2024.10717347