25-GBd 850-nm VCSEL for an Extended Temperature Range
Journal article, 2025
We investigate the performance of a 25 Gbaud 850 nm vertical-cavity surface-emitting laser (VCSEL) with reduced temperature dependence from -40 to 125 degrees C. The VCSEL design implements chirped quantum wells (QWs) with different compositions to broaden the gain spectrum and achieve sufficient performance over the entire temperature range at constant bias current and modulation voltage. A 6 mu m oxide aperture diameter VCSEL supports data transmission at 25 Gb/s NRZ from -40 to 125 degrees C with 8 mA bias current and 640 mV modulation voltage. The temperature dependencies of basic performance parameters are also compared to those of a conventional VCSEL with identical QWs.
Vertical-cavity surface-emitting laser
Temperature measurement
temperature dependence
Vertical cavity surface emitting lasers
Temperature dependence
Optical device fabrication
Modulation
Temperature distribution
Threshold current
Bandwidth
dynamics
Apertures
Chirp
Author
Hans Kaimre
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Alexander Grabowski
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
ILOOMINA
Johan Gustavsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Anders Larsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
NVIDIA
IEEE Photonics Technology Letters
1041-1135 (ISSN) 19410174 (eISSN)
Vol. 37 6 369-372Hot-Optics
Swedish Foundation for Strategic Research (SSF) (CHI19-0004), 2021-01-01 -- 2025-12-31.
Subject Categories (SSIF 2025)
Other Electrical Engineering, Electronic Engineering, Information Engineering
Condensed Matter Physics
Telecommunications
DOI
10.1109/LPT.2025.3547156