25-GBd 850-nm VCSEL for an Extended Temperature Range
Artikel i vetenskaplig tidskrift, 2025

We investigate the performance of a 25 Gbaud 850 nm vertical-cavity surface-emitting laser (VCSEL) with reduced temperature dependence from -40 to 125 degrees C. The VCSEL design implements chirped quantum wells (QWs) with different compositions to broaden the gain spectrum and achieve sufficient performance over the entire temperature range at constant bias current and modulation voltage. A 6 mu m oxide aperture diameter VCSEL supports data transmission at 25 Gb/s NRZ from -40 to 125 degrees C with 8 mA bias current and 640 mV modulation voltage. The temperature dependencies of basic performance parameters are also compared to those of a conventional VCSEL with identical QWs.

Vertical-cavity surface-emitting laser

Temperature measurement

temperature dependence

Vertical cavity surface emitting lasers

Temperature dependence

Optical device fabrication

Modulation

Temperature distribution

Threshold current

Bandwidth

dynamics

Apertures

Chirp

Författare

Hans Kaimre

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Alexander Grabowski

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

ILOOMINA

Johan Gustavsson

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

NVIDIA

IEEE Photonics Technology Letters

1041-1135 (ISSN) 19410174 (eISSN)

Vol. 37 6 369-372

Optiska länkar för krävande datormiljöer

Stiftelsen för Strategisk forskning (SSF) (CHI19-0004), 2021-01-01 -- 2025-12-31.

Ämneskategorier (SSIF 2025)

Annan elektroteknik och elektronik

Den kondenserade materiens fysik

Telekommunikation

DOI

10.1109/LPT.2025.3547156

Mer information

Senast uppdaterat

2025-03-28