Characterisation of InGaAs/AlAs resonant-tunnelling diodes
Conference poster, 2024
The RTDs used consist of two thin layers of AlAs enveloping a layer of InGaAs. Spacer layers of undoped InGaAs encase the AlAs and serve to reduce the device capacitance. Two lightly doped regions supply the charge carriers, and lastly, two heavily doped regions enable the fabrication of ohmic contacts. With coplanar waveguides connected to GSG contact pads, vertical RTDs capable of both one- and two-port on-wafer S-parameter measurements are fabricated. De-embedding structures and multiline thru-reflect-line calibration standards are also designed and fabricated on-chip. A thin film resistor is fabricated in parallel to the RTD to enable measurements in the negative differential conductance region of the RTD. Measurements are performed with and without the shunt resistor, and after de-embedding of the resistor the results are compared. We will present preliminary results of extracting RTD model parameters.
Author
Patrik Blomberg
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Josip Vukusic
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Jan Stake
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Lund, Sweden,
THz kommunikation - NU
Swedish Foundation for Strategic Research (SSF) (CHI19-0027), 2021-01-01 -- 2025-12-31.
Infrastructure
Kollberg Laboratory
Myfab (incl. Nanofabrication Laboratory)
Areas of Advance
Nanoscience and Nanotechnology
Subject Categories (SSIF 2025)
Nanotechnology for Electronic Applications