Electrical Detection of Magnetic Spin Textures Using Pure Spin Currents in Graphene
Journal article, 2025

Electrical creation, control, and detection of magnetic spin textures are pivotal in the advancement of magnetic data storage and logic technologies. All-electrical methods are especially important for detecting such magnetic textures due to their easier implementation in electronic circuits. Here, we demonstrate the electrical detection of different magnetic multidomain and vortex patterns through pure spin-polarized electronic transport in graphene spin-valve devices. We utilized ferromagnetic electrodes with engineered magnetic domain patterns to inject a spin current into the graphene spin transport channel, which was subsequently detected by a reference ferromagnetic electrode with a quasi-single domain. Distinct multilevel spin-valve switching patterns facilitate the discernment of the spin polarization from the diverse domain patterns. The magnetization of the ferromagnetic electrodes is correlated with magnetic force microscopy and micromagnetic simulations. These developments open avenues for probing magnetic domain and spin dynamics through fully electrical means with pure spin currents for spintronic memory and logic.

sensing

spin-valve

graphene

spin texture

magnetic domains

all-electricaldetection

Author

Lars Sjöström

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Bing Zhao

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Maha Khademi

Institution of physics at Gothenburg University

Roselle Ngaloy

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Alexei Kalaboukhov

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Johan Akerman

University of Gothenburg

Saroj Prasad Dash

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Nano Letters

1530-6984 (ISSN) 1530-6992 (eISSN)

Vol. In Press

2D material-based technology for industrial applications (2D-TECH)

VINNOVA (2019-00068), 2020-10-01 -- 2029-12-31.

2D Heterostructure Non-volatile Spin Memory Technology (2DSPIN-TECH)

European Commission (EC) (EC/HE/101135853), 2023-12-01 -- 2026-11-30.

Subject Categories (SSIF 2025)

Condensed Matter Physics

DOI

10.1021/acs.nanolett.5c04846

PubMed

41422404

More information

Latest update

12/29/2025