Boron at Si/SiO2 interface in SOI wafers and consequences for piezoresistive MEMS devices
Paper in proceedings, 2008

BESOI wafers are commonly used for MEMS fabrication and their quality is thus of great importance for the functionality and reliability of the device. It is therefore important to be aware that there is a manufacturing problem with boron impurity at the Si/SiO2 layer in the SOI wafer This impurity is not specified when purchasing the wafer and can alter the background doping up to several μm:s from the BOX, resulting in non-functional piezoresistive devices and unwanted limitation in membrane thickness. In this work we present guidelines on how to detect and counteract this impurity.

SOI

Piezoresistive

Boron impurity

MEMS

Author

Alexandra Nafari

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

David Karlén

Chalmers, Microtechnology and Nanoscience (MC2)

Cristina Rusu

Krister Svensson

Peter Enoksson

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

MicroMechanics Europe 2008

Subject Categories

Condensed Matter Physics

More information

Created

10/7/2017