Parameter extraction for bipolar transistors
Journal article, 1998
Different methods of extracting the DC Gummel-Poon bipolar transistor model parameters are reviewed. First the shortcomings of the classical extraction schemes for the intrinsic model are presented together with some improved procedures. Finally the extraction of the series resistances is addressed.
Author
Fredrik Ingvarson
Department of Microelectronics, Solid State Electronics
Kjell Jeppson
Department of Microelectronics, Solid State Electronics
Microelectronic Engineering
0167-9317 (ISSN)
Vol. 40 3-4 187-94Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1016/S0167-9317(98)00270-6