Metamorphic InGaAs telecom lasers on GaAs
Paper in proceedings, 2009

We demonstrate GaAs-based metamorphic lasers in the 1.3-1.55 μm telecom range grown by molecular beam epitaxy. The introduction of dopants in a compositionally graded layer is shown to significantly influence material properties, as well as having impact on the laser device design. Investigating and understanding of strain relaxation and dislocation dynamics is useful for improving material quality, performance and robustness of metamorphic devices. We demonstrate pulsed lasing up to 1.58 μm and continuous wave lasing at 1.3 μm at room temperature with low threshold currents.

Metamorphic

compositionally graded buffer layer

InGaAs

quantum well

GaAs

molecular beam epitaxy

telecom laser

Author

Ivar Tångring

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Yuxin Song

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

D.H. Wu

Chinese Academy of Sciences

Z.C. Niu

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Proceedings of SPIE - The International Society for Optical Engineering

0277786X (ISSN)

Vol. Proc. SPIE 7230 723003- 723003

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1117/12.808787

ISBN

978-0-8194-7476-6

More information

Latest update

10/2/2018