Mobility Improvement and Microwave Characterization of a Graphene Field Effect Transistor With Silicon Nitride Gate Dielectrics
Journal article, 2011

We report on the influence of a silicon nitride gate dielectric in graphene-based field-effect transistors (FETs). The silicon nitride is formed by a plasma enhanced chemical vapor deposition method. The process is based on a low density plasma at a high pressure (1 torr), which results in a low degradation of the graphene lattice during the top-gate formation process. Microwave measurements of the graphene FET show a cutoff frequency of 8.8 GHz for a gate length of 1.3 μm. A carrier mobility of 3800 cm2/V · s at room temperature was extracted from the dc characteristic.

Dielectric

microwave transistors

field-effect transistors (FETs)

graphene

Author

Omid Habibpour

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Serguei Cherednichenko

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Josip Vukusic

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

IEEE Electron Device Letters

0741-3106 (ISSN)

Vol. 32 7 871-873 5770174

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Infrastructure

Nanofabrication Laboratory

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/LED.2011.2147755

More information

Created

10/7/2017