Resistive Graphene FET Subharmonic Mixers: Noise and Linearity Assessment
Journal article, 2012

We report on the first complete RF characterization of graphene field-effect transistor subharmonic resistive mixers in the frequency interval 2–5 GHz. The analysis includes conversion loss (CL), noise figure (NF), and intermodulation distortion. Due to an 8-nm thin Al2O3 gate dielectric, the devices operate at only 0 dBm of local oscillator (LO) power with an optimum measured CL in the range of 20–22 dB. The NF closely mimics the CL, thus determining the noise to be essentially thermal in origin, which is promising for cryogenic applications. The highest input third-order intercept point is measured to be 4.9 dBm at an LO power of 2 dBm.

noise measurements

graphene

Field-effect transistors (FETs)

subharmonic resistive mixers

intermodulation distortion (IMD)

Author

MICHAEL ANDERSSON

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Omid Habibpour

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Josip Vukusic

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 60 12 4035-4042 6334441

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Infrastructure

Nanofabrication Laboratory

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/TMTT.2012.2221141

More information

Created

10/7/2017