True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications
Journal article, 2013
Cryogenic
alsb/inas hemts
Ion implantation
impact ionization
inas
Low-power
device
InAs/AlSb high electron mobility transistor (HEMT)
isolation
gaas
heterostructures
MMICs
low-voltage
ohmic contacts
conductance
field-effect transistors
Author
Giuseppe Moschetti
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Morteza Abbasi
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
A. Hallen
Royal Institute of Technology (KTH)
L. Desplanque
University of Lille
X. Wallart
University of Lille
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Solid-State Electronics
0038-1101 (ISSN)
Vol. 79 268-273Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1016/j.sse.2012.06.013