True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications
Journal article, 2013

In this paper, we report the room-temperature and cryogenic properties of true planar 110 nm InAs/AlSb HEMTs fabricated with Ar-ion isolation technology. Device isolation is generally improved and is in particular increased by four orders of magnitude at 6 K compared to 300 K. This results in improved drain current saturation, lower gate leakage current and 23% higher peak transconductance. The RF performance is significantly improved as well, with 47% higher f(T) (162 GHz) and 72% higher f(max) (155 GHz) at the low drain voltage of 0.1 V, compared to room temperature. The overall performance of the fabricated devices shows the suitability of ion implantation for the device isolation at cryogenic temperature. Furthermore, the excellent stability against oxidation and truly planar structure of these devices demonstrate great potential for highly integrated cryogenic millimeter-wave circuits in InAs/AlSb technology with ultra-low power consumption.

alsb/inas hemts

Ion implantation

impact ionization

inas

InAs/AlSb high electron mobility transistor (HEMT)

gaas

heterostructures

MMICs

conductance

field-effect transistors

Cryogenic

ohmic contacts

low-voltage

isolation

device

Low-power

Author

Giuseppe Moschetti

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Morteza Abbasi

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

A. Hallen

Royal Institute of Technology (KTH)

L. Desplanque

University of Lille

X. Wallart

University of Lille

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Solid-State Electronics

0038-1101 (ISSN)

Vol. 79 268-273

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1016/j.sse.2012.06.013

More information

Latest update

2/26/2018