Electroluminescence from silicon p-n junctions prepared by wafer bonding
Paper in proceedings, 1998

We report on electro- and photoluminescence from silicon p-n diodes formed by hydrophobic wafer bonding. Four main spectral features associated with the bonded interface are detected at photon energies between 0.8 and 0.9 eV. Two of these signals are identified as the dislocation-related signals D1 and D2 while two peaks at 0.83 eV and 0.89 eV remain unidentified. However, we observe a signal similar to the 0.83 eV signal in polysilicon and at the junction of a silicon bicrystal

dislocations

wafer bonding

semiconductor diodes

bicrystals

photoluminescence

electroluminescence

elemental semiconductors

p-n junctions

silicon

surface chemistry

Author

Einar Sveinbjörnsson

Department of Solid State Electronics

Stefan Bengtsson

Department of Solid State Electronics

J. Weber

N. Keskitalo

Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications

264-

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

10/7/2017