Influence of initial GaAs and AlAs cap layers on InAs quantum dots grown by molecular beam epitaxy
Journal article, 2003

Capping of InAs quantum dots (QDs) with AlAs or GaAs causes a significant change in the structural properties of the QDs. However, there is a basic difference between these two capping materials. The GaAs capping causes a dramatic reduction of the dot density and height. AlAs capping, on the other hand, results in a partly suppressed height reduction and a higher dot density.

aluminium compounds

indium compounds

semiconductor quantum dots

III-V semiconductors

semiconductor epitaxial layers

molecular beam epitaxial growth

semiconductor growth

gallium arsenide


Fariba Ferdos

Department of Microelectronics

Shu Min Wang

Department of Microelectronics

Yongqiang Wei

Department of Microelectronics

Mahdad Sadeghi

Engineering and Industrial Design, MC2 Process Laboratory

Qing Xiang Zhao

Chalmers, Physical Electronics and Photonics

Anders Larsson

Department of Microelectronics

Journal of Crystal Growth

0022-0248 (ISSN)

Vol. 251 1-4 145-9

Subject Categories


Condensed Matter Physics



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