Hybrid measurement-based extraction of consistent large-signal models for microwave FETs
Paper in proceedings, 2013

This paper discusses a procedure to extract large-signal models for microwave transistors. By using experimental data, which not necessarily reflect the actual operating conditions, accurate large-signal models, suitable for CAD tools and working at high frequencies, can be obtained by combining direct extraction of basic parameters and numerical optimization. The idea consists of linking the model parameters directly to experimental data. In this way the extraction procedure is sped up. Examples of large-signal models for GaAs and GaN transistors are reported.

large-signal models

microvawe transitors

nonlinear measurements

Author

Iltcho Angelov

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Mattias Thorsell

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Dan Kuylenstierna

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

G. Avolio

D. Schreurs

A. Raffo

G. Vannini

43rd European Microwave Conference, EuMC 2013 - Held as Part of the 16th European Microwave Week, EuMW 2013; Nuremberg; Germany; 7 October 2013 through 10 October 2013

267-270

Areas of Advance

Information and Communication Technology

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

ISBN

978-287487031-6

More information

Created

10/7/2017