Phase transition of bismuth telluride thin films grown by MBE
Journal article, 2014
A previously unreported phase transition between Bi2Te3 and Bi4Te3 in bismuth telluride grown by molecular beam epitaxy is recorded via XRD, AFM, and SIMS observations. This transition is found to be related to the Te/Bi beam equivalent pressure (BEP) ratio. BEP ratios below 17 favor the formation of Bi4Te3 while Bi2Te3 is formed at higher ratios. Transport measurements reveal that Bi2Te3 has higher electron mobility than Bi4Te3.
Author
Attila Fülöp
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Yuxin Song
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Sophie Charpentier
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Peixiong Shi
Technical University of Denmark (DTU)
Maria Ekström
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
luca galletti
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Riccardo Arpaia
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Thilo Bauch
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Floriana Lombardi
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Applied Physics Express
18820778 (ISSN) 18820786 (eISSN)
Vol. 7 4 Art. no. 045503- 045503Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
Areas of Advance
Materials Science
DOI
10.7567/APEX.7.045503