Phonon black-body radiation limit for heat dissipation in electronics
Journal article, 2015
Thermal dissipation at the active region of electronic devices is a fundamental process of considerable importance. Inadequate heat dissipation can lead to prohibitively large temperature rises that degrade performance, and intensive efforts are under way to mitigate this self-heating. At room temperature, thermal resistance is due to scattering, often by defects and interfaces in the active region, that impedes the transport of phonons. Here, we demonstrate that heat dissipation in widely used cryogenic electronic
devices instead occurs by phonon black-body radiation
with the complete absence of scattering, leading to large
self-heating at cryogenic temperatures and setting a key limiton the noise floor. Our result has important implications for the many fields that require ultralow-noise electronic devices.
phonon black-body radiation
electronics
Heat dissipation
cryogenic
Author
Joel Schleeh
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
J. Mateos
University of Salamanca
Ignacio Íñiguez-De-La-Torre
University of Salamanca
Niklas Wadefalk
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
A. J. Minnich
California Institute of Technology (Caltech)
Nature Materials
1476-1122 (ISSN) 1476-4660 (eISSN)
Vol. 14 2 187-192Areas of Advance
Information and Communication Technology
Infrastructure
Nanofabrication Laboratory
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1038/NMAT4126