Phonon black-body radiation limit for heat dissipation in electronics
Artikel i vetenskaplig tidskrift, 2015
Thermal dissipation at the active region of electronic devices is a fundamental process of considerable importance. Inadequate heat dissipation can lead to prohibitively large temperature rises that degrade performance, and intensive efforts are under way to mitigate this self-heating. At room temperature, thermal resistance is due to scattering, often by defects and interfaces in the active region, that impedes the transport of phonons. Here, we demonstrate that heat dissipation in widely used cryogenic electronic
devices instead occurs by phonon black-body radiation
with the complete absence of scattering, leading to large
self-heating at cryogenic temperatures and setting a key limiton the noise floor. Our result has important implications for the many fields that require ultralow-noise electronic devices.
phonon black-body radiation
electronics
Heat dissipation
cryogenic
Författare
Joel Schleeh
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Gigahertzcentrum
J. Mateos
Universidad de Salamanca
Ignacio Íñiguez-De-La-Torre
Universidad de Salamanca
Niklas Wadefalk
Gigahertzcentrum
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Per-Åke Nilsson
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Gigahertzcentrum
Jan Grahn
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Gigahertzcentrum
A. J. Minnich
California Institute of Technology (Caltech)
Nature Materials
1476-1122 (ISSN) 1476-4660 (eISSN)
Vol. 14 2 187-192Styrkeområden
Informations- och kommunikationsteknik
Infrastruktur
Nanotekniklaboratoriet
Ämneskategorier
Annan elektroteknik och elektronik
DOI
10.1038/NMAT4126