High-Speed VCSELs with Strong Confinement of Optical Fields and Carriers
Journal article, 2016

We present the design, fabrication, and performance of our latest generation high-speed oxide-confined 850-nm verticalcavity surface-emitting lasers. Excellent high-speed properties are obtained by strong confinement of optical fields and carriers. Highspeed modulation is facilitated by using the shortest possible cavity length of one half wavelength and placing oxide apertures close to the active region to efficiently confine charge carriers. The resulting strong current confinement boosts internal quantum efficiency, leading to low threshold currents, high wall-plug efficiency, and state-of-the-art high-speed properties at low bias currents. The temperature dependent static and dynamic performance is analyzed by current-power-voltage and small-signal modulation measurements.

semiconductor lasers

high efficiency

vertical-cavity surface-emitting lasers (VCSELs)

Dynamics

high-speed modulation

optical interconnects

Author

Erik Haglund

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Petter Westbergh

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Johan Gustavsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Emanuel Haglund

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Journal of Lightwave Technology

0733-8724 (ISSN)

Vol. 34 2 269-277 7163496

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Telecommunications

Infrastructure

Nanofabrication Laboratory

DOI

10.1109/jlt.2015.2458935

More information

Created

10/8/2017