Integration of components in a 50 nm {InGaAs}-{InAlAs}-{InP} {HEMT} process with pseudomorphic $\rm{In}_{0.35}{Ga}_{0.35}{As}$ channel
Paper in proceeding, 2004
Author
Anders Mellberg
Chalmers, Microtechnology and Nanoscience (MC2)
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Mikael Malmkvist
Chalmers, Microtechnology and Nanoscience (MC2)
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Chalmers, Microtechnology and Nanoscience (MC2)
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2)
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Chalmers, Microtechnology and Nanoscience (MC2)
Proc. 34th European Microwave Conf.
171-174
Subject Categories (SSIF 2011)
Electrical Engineering, Electronic Engineering, Information Engineering