1060 nm VCSEL for up to 40 Gbit/s Data Transmission
Paper in proceedings, 2016

A GaAs-based 1060 nm VCSEL with strained InGaAs/GaAsP QWs, doped DBRs, a short optical cavity, and multiple oxide apertures is presented. Modulation up to 40 Gbit/s at 25°C and 30 Gbit/s at 85°C is demonstrated.

Vertical-cavity surface-emitting laser (VCSEL)

optical interconnects

Author

Ewa Simpanen

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Johan Gustavsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Erik Haglund

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Emanuel Haglund

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

W. V. Sorin

Hewlett-Packard Company

S. Mathai

Hewlett-Packard Company

Michael Tan

Hewlett-Packard Company

Conference Digest - IEEE International Semiconductor Laser Conference

08999406 (ISSN)

Article no 7765757- 7765757

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology

Subject Categories

Telecommunications

Communication Systems

Nano Technology

Condensed Matter Physics

Infrastructure

Nanofabrication Laboratory

ISBN

978-4-8855-2306-9

More information

Latest update

11/20/2018