1060 nm VCSEL for up to 40 Gbit/s Data Transmission
Paper in proceeding, 2016
A GaAs-based 1060 nm VCSEL with strained InGaAs/GaAsP QWs, doped DBRs, a short optical cavity, and multiple oxide apertures is presented. Modulation up to 40 Gbit/s at 25°C and 30 Gbit/s at 85°C is demonstrated.
Vertical-cavity surface-emitting laser (VCSEL)
optical interconnects
Author
Ewa Simpanen
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Johan Gustavsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Erik Haglund
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Emanuel Haglund
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Anders Larsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
W. V. Sorin
Hewlett-Packard Company
S. Mathai
Hewlett-Packard Company
Michael Tan
Hewlett-Packard Company
Conference Digest - IEEE International Semiconductor Laser Conference
08999406 (ISSN)
Article no 7765757- 7765757978-4-8855-2306-9 (ISBN)
Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Subject Categories
Telecommunications
Communication Systems
Nano Technology
Condensed Matter Physics
Infrastructure
Nanofabrication Laboratory
ISBN
978-4-8855-2306-9