1060 nm single-mode vertical-cavity surface-emitting laser operating at 50 Gbit/s data rate
Journal article, 2017

An energy efficient 1060 nm GaAs-based oxide-confined vertical-cavity surface-emitting laser designed for high-speed modulation and singlemode emission has been developed. A record data rate of 50 Gbit/ s at an energy dissipation of 100 fJ/ bit is demonstrated for a device with > 50 dB side-mode-suppression and 0.2 mA threshold current, making this laser a promising light source for long-reach optical interconnects.

frequency 2

phase imbalances

resistors

isolation resistors

45 GHz

frequency 0

compact dual-band five-way Wilkinson power divider

two-section impedance transformers

915 GHz

magnitude imbalances

RF performance

power dividers

Author

Ewa Simpanen

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Johan Gustavsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Erik Haglund

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Emanuel Haglund

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

W. V. Sorin

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

S. Mathai

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

M. R. Tan

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Electronics Letters

0013-5194 (ISSN) 1350-911X (eISSN)

Vol. 53 13 869-870

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1049/el.2017.1165

More information

Latest update

7/23/2018