[J]. Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy
Journal article, 2005

Author

Stefan Davidsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Fredrik Fälth

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Xinju Liu

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Thorvald Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Journal of applied physics

Vol. 98 1 16109-

Subject Categories

Condensed Matter Physics

More information

Created

10/8/2017