Enhanced gate stack stability in GaN transistors with gate dielectric of bilayer SiNx by low pressure chemical vapor deposition
Journal article, 2018

We report enhanced gate stack stability in GaN metal insulator semiconductor high electron mobility transistors (MISHEMTs) by using a bilayer SiNx as the gate dielectric. To obtain the bilayer gate dielectric scheme, a thin Si-rich SiNx interlayer was deposited before a high-resistivity SiNx layer by low pressure chemical vapor deposition. The Si-rich SiNx can effectively suppress the trapping phenomenon at the interface of the dielectric/AlGaN barrier. The upper high-resistivity SiNx layer can greatly block the gate leakage current to enable a large gate swing. Compared with the MISHEMTs using a single Si-rich or high-resistivity SiNx layer, the MISHEMTs with a bilayer gate dielectric take the advantages of both, realizing a gate stack with a stable threshold voltage and low leakage current. These results thus present great potential for developing high-performance GaN MISHEMTs using the bilayer SiNx gate dielectric scheme for highly efficient power applications. Published by AIP Publishing.

Author

Tongde Huang

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Nanjing University

Huaxing Jiang

Hong Kong University of Science and Technology

Johan Bergsten

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Kei May Lau

Hong Kong University of Science and Technology

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 113 23 232102

Subject Categories

Materials Chemistry

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

DOI

10.1063/1.5042809

More information

Latest update

2/19/2019