Noise performance of a balanced waveguide NbN HEB mixer utilizing a GaN buffer-layer at 1.3 THz
Paper in proceedings, 2018

We report on the initial measurement results of a balanced waveguide phonon cooled NbN mixer employing a 5.5 ┬Ám thin GaN membrane, which was operated at frequencies around 1.3 THz. The uncorrected DSB noise temperature amounts to approximately 750 K at 1 GHz IF and increases to only 900 K at 4 GHz IF, which was deduced from the standard Y-factor measurement technique. The recorded IF spectrum from 0.5 GHz to 8 GHz suggests a measured noise bandwidth of approximately 7 GHz owing to the employment of a GaN buffer-layer, which promotes the single crystal growth of NbN films and provides high phonon transparency, thus lowering the phonon escape time. We emphasize with the implementation of a waveguide balanced receiver scheme and using NbN/GaN mixers the possibility to extend the operational IF range of phonon cooled NbN HEBs, yet providing low noise performance.

Hot Electron Bolometer mixer

THz receiver

NbN thin film

Author

Sascha Krause

Chalmers, Space, Earth and Environment, Onsala Space Observatory, GARD Technology

Denis Meledin

Chalmers, Space, Earth and Environment, Onsala Space Observatory, GARD Technology

Vincent Desmaris

Chalmers, Space, Earth and Environment, Onsala Space Observatory, GARD Technology

Alexey Pavolotskiy

Chalmers, Space, Earth and Environment, Onsala Space Observatory, GARD Technology

Victor Belitsky

Chalmers, Space, Earth and Environment, Onsala Space Observatory, GARD Technology

2018 29th IEEE International Symposium on Space Terahertz Technology, ISSTT 2018

36-39

9th IEEE International Symposium on Space Terahertz Technology, ISSTT 2018
Pasadena, USA,

Subject Categories

Communication Systems

Signal Processing

Other Electrical Engineering, Electronic Engineering, Information Engineering

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Latest update

1/21/2021