Noise performance of a balanced waveguide NbN HEB mixer utilizing a GaN buffer-layer at 1.3 THz
Paper i proceeding, 2018

We report on the initial measurement results of a balanced waveguide phonon cooled NbN mixer employing a 5.5 µm thin GaN membrane, which was operated at frequencies around 1.3 THz. The uncorrected DSB noise temperature amounts to approximately 750 K at 1 GHz IF and increases to only 900 K at 4 GHz IF, which was deduced from the standard Y-factor measurement technique. The recorded IF spectrum from 0.5 GHz to 8 GHz suggests a measured noise bandwidth of approximately 7 GHz owing to the employment of a GaN buffer-layer, which promotes the single crystal growth of NbN films and provides high phonon transparency, thus lowering the phonon escape time. We emphasize with the implementation of a waveguide balanced receiver scheme and using NbN/GaN mixers the possibility to extend the operational IF range of phonon cooled NbN HEBs, yet providing low noise performance.

Hot Electron Bolometer mixer

THz receiver

NbN thin film


Sascha Krause

Avancerad mottagarutveckling (GARD)

Denis Meledin

Avancerad mottagarutveckling (GARD)

Vincent Desmaris

Avancerad mottagarutveckling (GARD)

Alexey Pavolotskiy

Avancerad mottagarutveckling (GARD)

Victor Belitsky

Avancerad mottagarutveckling (GARD)

2018 29th IEEE International Symposium on Space Terahertz Technology, ISSTT 2018


9th IEEE International Symposium on Space Terahertz Technology, ISSTT 2018
Pasadena, USA,




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