Manipulation of strain relaxation in metamorphic heterostructures
Journal article, 2007

The authors have discovered that high doping densities in an alloy graded InGaAs buffer have dramatic effects on strain relaxation dynamics and consequently surface and optical qualities in metamorphic heterostructures. Compared with undoped graded buffers, the use of Be doping significantly improves structural, surface, and optical qualities while the use of Si doping deteriorates all these properties. This discovery is significant for the realization of metamorphic optoelectronic devices.

Author

Ivar Tångring

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Zonghe Lai

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mahdad Sadeghi

Chalmers, Microtechnology and Nanoscience (MC2)

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Applied Physics Letters

Vol. 90 071904-

Subject Categories

Condensed Matter Physics

More information

Created

10/7/2017