DC and RF performance of 0.2-0.4µm gate length InAs/AlSb HEMTs
Paper in proceeding, 2007
Author
Malin Borg
Chalmers, Microtechnology and Nanoscience (MC2)
Eric Lefebvre
Chalmers, Microtechnology and Nanoscience (MC2)
Mikael Malmkvist
Chalmers, Microtechnology and Nanoscience (MC2)
Ludovic Desplanque
Xavier Wallart
Yannick Roelens
Gilles Dambrine
Alain Cappy
Sylvain Bollaert
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2)
Proc. 19th Indium Phosphide and Related Materials
pp. 67-70
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering