XPS calibration study of thin-film nickel silicides
Artikel i vetenskaplig tidskrift, 2009

This paper presents a systematic X-ray photoelectron spectroscopy (XPS)study of the Ni silicides Ni3Si, Ni31Si12, Ni2Si, NiSi and NiSi2 produced by annealing of sputtered thin films. The in situ XPS study focuses on both the core level peaks and Auger peaks. The peak positions, shapes, satellites as well as Auger parameters are compared for different silicides. The factors that influence the Ni core level peak shifts are discussed. The Ni 2p3/2 peak shape and satellites are correlated with the valence band structure. The effect of argon ion etching on surface composition and chemical states is also investigated.

Wagner plot

XPS

Ni silicides

depth profile

Auger parameter

core level

Författare

Yu Cao

Chalmers, Material- och tillverkningsteknik, Yt- och mikrostrukturteknik

Lars Nyborg

Chalmers, Material- och tillverkningsteknik, Yt- och mikrostrukturteknik

Urban Paul Einar Jelvestam

Chalmers, Material- och tillverkningsteknik, Yt- och mikrostrukturteknik

Surface and Interface Analysis

0142-2421 (ISSN) 1096-9918 (eISSN)

Vol. 41 6 471-483

Ämneskategorier

Bearbetnings-, yt- och fogningsteknik

DOI

10.1002/sia.3050

Mer information

Skapat

2017-10-08