CMOS devices and circuits for microwave and millimetre wave applications
Paper i proceeding, 2005

We present several building blocks for RF front ends at micro and mm-wave frequencies using 90 nm CMOS. The designs are 20 GHz single- and 40 GHz double stage amplifiers with 5.6 and 7.3 dB gain respectively, a 20 GHz resistive mixer with CL = 7.9 dB and IIP3 = 17.5 dBm plus frequency doublers to 40 and 60 GHz with CL = 15.8 and 15.3 dB respectively. All circuits have been designed using distributed elements. Both using a 5 metal layer BEOL process and a 3 metal layer BEOL with post processing.

Författare

Mattias Ferndahl

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Bahar M. Motlagh

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Anowar Masud

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Iltcho Angelov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

H.-O. Vickes

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

13th European Gallium Arsenide Conference

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2017-10-06