Fully Integrated 60-GHz Single-Ended Resistive Mixer in 90-nm CMOS Technology
Artikel i vetenskaplig tidskrift, 2005

This letter presents the design and characterization of a fully integrated 60-GHz single-ended resistive mixer in a 90-nm CMOS technology. A conversion loss of 11.6dB, 1-dB compression point of 6dBm and IIP3 of 16.5dBm were measured with a local oscillator (LO) power of 4dBm and zero drain bias. The possibility of improvement in IIP3 with selective drain bias has been verified. A 3-dB improvement in IIP3 was obtained with 150-mV dc voltage applied at the drain. Microstrip transmission lines are used to realize matching and filtering at LO and radio frequency ports.

Författare

Bahar M. Motlagh

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Sten Gunnarsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mattias Ferndahl

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Microwave and Wireless Components Letters, IEEE

Vol. 16 25-27

Ämneskategorier

Annan elektroteknik och elektronik