Excess Dissipation in a Single-Electron Box: The Sisyphus Resistance
Artikel i vetenskaplig tidskrift, 2010
We present measurements of the ac response of a single-electron box (SEB). We apply a radio frequency signal with a Frequency larger than the tunneling rate and drive the system out of equilibrium. We observe much more dissipation in the SEB then one would expect from a simple circuit model, We can explain this in terms of a mechanism that we call the Sisyphus resistance. The Sisyphus resistance has a strong gate dependence which can be used for electrometery applications.
rf-reflectometry
Dissipation
transistor
superconducting qubit
single-electron box
interferometry
Sisyphus resistance
Författare
Fredrik Persson
Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik
Christopher Wilson
Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik
Martin Sandberg
Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik
Göran Johansson
Chalmers, Mikroteknologi och nanovetenskap (MC2), Tillämpad kvantfysik
Per Delsing
Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik
Nano Letters
1530-6984 (ISSN) 1530-6992 (eISSN)
Vol. 10 3 953-957Ämneskategorier
Fysik
DOI
10.1021/nl903887x