Excess Dissipation in a Single-Electron Box: The Sisyphus Resistance
Artikel i vetenskaplig tidskrift, 2010

We present measurements of the ac response of a single-electron box (SEB). We apply a radio frequency signal with a Frequency larger than the tunneling rate and drive the system out of equilibrium. We observe much more dissipation in the SEB then one would expect from a simple circuit model, We can explain this in terms of a mechanism that we call the Sisyphus resistance. The Sisyphus resistance has a strong gate dependence which can be used for electrometery applications.

rf-reflectometry

Dissipation

transistor

superconducting qubit

single-electron box

interferometry

Sisyphus resistance

Författare

Fredrik Persson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Christopher Wilson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Martin Sandberg

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Göran Johansson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Tillämpad kvantfysik

Per Delsing

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Nano Letters

1530-6984 (ISSN) 1530-6992 (eISSN)

Vol. 10 953-957

Ämneskategorier

Fysik

DOI

10.1021/nl903887x