Excess Dissipation in a Single-Electron Box: The Sisyphus Resistance

Artikel i vetenskaplig tidskrift, 2010

We present measurements of the ac response of a single-electron box (SEB). We apply a radio frequency signal with a Frequency larger than the tunneling rate and drive the system out of equilibrium. We observe much more dissipation in the SEB then one would expect from a simple circuit model, We can explain this in terms of a mechanism that we call the Sisyphus resistance. The Sisyphus resistance has a strong gate dependence which can be used for electrometery applications.