A broadband differential cascode power amplifier in 45 nm CMOS for high-speed 60 GHz system-on-chip
Paper i proceeding, 2010

A compact two-stage differential cascode power amplifier is designed and fabricated in 45 nm standard LP CMOS. The cascode configuration, with the common gate device placed in a separate P-well, provides reliable operating condition for the devices. The amplifier shows 20 dB small-signal gain centered at 60 GHz with a flat frequency response and 1-dB bandwidth of 10 GHz. The broadband large-signal operation is also ensured by providing constant load resistance to both stages over the entire band and coupling them with a dual resonance matching network. The chip delivers 11.2 dBm output power at 1-dB compression and up to 14.5 dBm power in saturation. The power amplifier operates with 2 V supply and draws 90 mA total current which results in 14.4% maximum PAE. The output third order intercept point is measured to be 18 dBm for two-tone measurement at 60 GHz with 0.5 GHz, 1 GHz and 2 GHz frequency separations. © 2010 IEEE.

Power amplifier


45nm CMOS

60 GHz

Isolated P-well


Morteza Abbasi

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Torgil Kjellberg

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

E. van der Heijden

NXP Semiconductors Netherlands

Anton J. M. De Graauw

NXP Semiconductors Netherlands

R. Roovers

NXP Semiconductors Netherlands

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

2010 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2010; Anaheim, CA; 23 May 2010 through 25 May 2010

1529-2517 (ISSN)



Annan elektroteknik och elektronik



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