Broadband Gm-Boosted Differential HBT Doublers With Transformer Balun
Artikel i övriga tidskrifter, 2011

Broadband monolithic InGaP HBT frequency doublers for K-band application have been developed. The designs employ a Gm-boosted differential common-base configuration using either capacitive or transformer-based coupling between base and emitters. To the authors' best knowledge, these are the first frequency doublers utilizing the Gm-boosted configuration and the result demonstrate larger bandwidth and higher output power than any previously reported frequency doublers. The design with cross-coupled capacitors presents a fundamental rejection better than 20 dB over a 100% 3-dB bandwidth, extending from 6 to 18 GHz. The transformer-coupled design has about 15-dB fundamental rejection over a slightly narrower bandwidth extending from 7 to 16 GHz. Both doublers have conversion gain peaking at more than -0.8 dB and output power Psat > 13 dBm. The designs are also very compact with chip sizes less than 0.5 mm(2).

phemt

frequency doubler

balun

technology

lna

transformer coupling

transformer

Capacitor-crossed coupling

InGaP HBT

design

balanced frequency doubler

cmos

Författare

J. Zhang

Chalmers University of Technology

M. Q. Bao

Microwave and High Speed Electronics Research Center (MHSERC)

Dan Kuylenstierna

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Szhau Lai

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GigaHertz Centrum

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 59 2953-2960

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/TMTT.2011.2166121