Broadband Gm-Boosted Differential HBT Doublers With Transformer Balun
Artikel i övriga tidskrifter, 2011

Broadband monolithic InGaP HBT frequency doublers for K-band application have been developed. The designs employ a Gm-boosted differential common-base configuration using either capacitive or transformer-based coupling between base and emitters. To the authors' best knowledge, these are the first frequency doublers utilizing the Gm-boosted configuration and the result demonstrate larger bandwidth and higher output power than any previously reported frequency doublers. The design with cross-coupled capacitors presents a fundamental rejection better than 20 dB over a 100% 3-dB bandwidth, extending from 6 to 18 GHz. The transformer-coupled design has about 15-dB fundamental rejection over a slightly narrower bandwidth extending from 7 to 16 GHz. Both doublers have conversion gain peaking at more than -0.8 dB and output power Psat > 13 dBm. The designs are also very compact with chip sizes less than 0.5 mm(2).

design

balun

InGaP HBT

frequency doubler

transformer coupling

lna

balanced frequency doubler

phemt

cmos

transformer

Capacitor-crossed coupling

technology

Författare

J. Zhang

Chalmers, Mikroteknologi och nanovetenskap (MC2)

M. Q. Bao

Microwave and High Speed Electronics Research Center (MHSERC)

Dan Kuylenstierna

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Gigahertzcentrum

Szhau Lai

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Gigahertzcentrum

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Gigahertzcentrum

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 59 11 2953-2960

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik (2010-2017)

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/TMTT.2011.2166121

Mer information

Senast uppdaterat

2019-07-17