Identification technique of FET model based on vector nonlinear measurements
Artikel i vetenskaplig tidskrift, 2011

A new modelling approach which exploits only vector nonlinear measurements is described. The parameters of the I-V and Q-V nonlinear constitutive functions are identified by combining low-and high-frequency large-signal measurements with a numerical optimisation routine. Low-frequency dispersion manifesting in the I-V characteristics is also correctly accounted for. As a case study a gallium nitride HEMT on silicon carbide substrate is considered and very good agreement between measurements and simulation is achieved.

large-signal measurements



G. Avolio

KU Leuven

D. Schreurs

KU Leuven

A. Raffo

University of Ferrara

G. Crupi

Universita degli Studi di Messina

Iltcho Angelov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

G. Vannini

University of Ferrara

B. Nauwelaers

KU Leuven

Electronics Letters

0013-5194 (ISSN) 1350-911X (eISSN)

Vol. 47 24 1323-U37


Elektroteknik och elektronik



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