A Large Signal Graphene FET Model
Artikel i vetenskaplig tidskrift, 2012

We propose a semiempirical graphene field effect transistor (G-FET) model for analysis and design of G-FET based circuits. The model describes the current-voltage characteristic for a G-FET over a wide range of operating conditions. The gate bias dependence of the output power spectrum is studied and compared with simulated values. A good agreement between the simulated and the experimental power spectrum up to the 3rd harmonic is demonstrated which confirms the model validity. Moreover, S-parameter measurements essentially coincide with the results obtained from the simulation. The model contains a small set of fitting parameters which can straightforwardly be extracted from S-parameters and DC measurements. The developed extraction method gives a more accurate estimation of the drain and source contact resistances compared to other approaches. As a design example, we use a harmonic-balance load-pull approach to extract optimum embedding impedances for a subharmonic G-FET mixer.

harmonic balance analysis

subharmonic mixer

semiconductor device modeling

Microwave FETs

Graphene

Författare

Omid Habibpour

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Josip Vukusic

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Jan Stake

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

IEEE Transactions on Electron Devices

0018-9383 (ISSN)

Vol. 59 5 1567-1567

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik

Infrastruktur

Nanotekniklaboratoriet

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1109/TED.2012.2194331