A Large Signal Graphene FET Model
Journal article, 2012

We propose a semiempirical graphene field effect transistor (G-FET) model for analysis and design of G-FET based circuits. The model describes the current-voltage characteristic for a G-FET over a wide range of operating conditions. The gate bias dependence of the output power spectrum is studied and compared with simulated values. A good agreement between the simulated and the experimental power spectrum up to the 3rd harmonic is demonstrated which confirms the model validity. Moreover, S-parameter measurements essentially coincide with the results obtained from the simulation. The model contains a small set of fitting parameters which can straightforwardly be extracted from S-parameters and DC measurements. The developed extraction method gives a more accurate estimation of the drain and source contact resistances compared to other approaches. As a design example, we use a harmonic-balance load-pull approach to extract optimum embedding impedances for a subharmonic G-FET mixer.

harmonic balance analysis

subharmonic mixer

semiconductor device modeling

Microwave FETs

Graphene

Author

Omid Habibpour

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Josip Vukusic

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

IEEE Transactions on Electron Devices

0018-9383 (ISSN)

Vol. 59 5 1567-1567

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Infrastructure

Nanofabrication Laboratory

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/TED.2012.2194331

More information

Created

10/7/2017