Carrier conduction through the quantum barrier in a heterostructure barrier varactor Induced by an AC-Bias
Artikel i vetenskaplig tidskrift, 2000

By solving the time-dependent Schrodinger equation, we have studied the quantum transport of a wavepacket in a GaAs/A1GaAs heterostructure barrier varactor (HBV) diode induced by an ac bias. The current conduction of a wavepacket is complicated due to the superposition of many different stationary states. When the oscillating frequency of the external bias is relatively low, the motion of the wavepacket follows the electric field induced by the external bias. When the frequency is too high (over 1000 GHz for the GaAs/A1GaAs HBV structure under investigation), the wavepacket becomes effectively confined by the oscillating bias, and the conduction current is significantly reduced.

physical simulation

frequency multiplier

HBV

Författare

Ying Fu

Chalmers, Forskargrupp för fysikalisk elektronik och fotonik

Magnus Willander

Chalmers, Forskargrupp för fysikalisk elektronik och fotonik

Jan Stake

Institutionen för mikroelektronik

Lars Dillner

Institutionen för mikroelektronik

Erik Kollberg

Institutionen för mikroelektronik

Superlattices and Microstructures

Vol. 28 135-141

Ämneskategorier

Annan elektroteknik och elektronik

Den kondenserade materiens fysik