Controllable chemical vapor deposition of large area uniform nanocrystalline graphene directly on silicon dioxide
Artikel i vetenskaplig tidskrift, 2012

Metal-catalyst-free chemical vapor deposition (CVD) of large area uniform nanocrystalline graphene on oxidized silicon substrates is demonstrated. The material grows slowly, allowing for thickness control down to monolayer graphene. The as-grown thin films are continuous with no observable pinholes, and are smooth and uniform across whole wafers, as inspected by optical-, scanning electron-, and atomic force microscopy. The sp(2) hybridized carbon structure is confirmed by Raman spectroscopy. Room temperature electrical measurements show ohmic behavior (sheet resistance similar to exfoliated graphene) and up to 13% of electric-field effect. The Hall mobility is similar to 40 cm(2)/ Vs, which is an order of magnitude higher than previously reported values for nanocrystalline graphene. Transmission electron microscopy, Raman spectroscopy, and transport measurements indicate a graphene crystalline domain size similar to 10 nm. The absence of transfer to another substrate allows avoidance of wrinkles, holes, and etching residues which are usually detrimental to device performance. This work provides a broader perspective of graphene CVD and shows a viable route toward applications involving transparent electrodes.

catalytic graphitization

amorphous-carbon films

weak-localization

magnetoresistance

nanotubes

raman-spectroscopy

Författare

Jie Sun

Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik

Niclas Lindvall

Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik

M. T. Cole

University of Cambridge

Teng Wang

Chalmers, Teknisk fysik, Elektronikmaterial

T. J. Booth

Danmarks Tekniske Universitet (DTU)

P. Boggild

Danmarks Tekniske Universitet (DTU)

K. B. K. Teo

Aixtron

Johan Liu

Chalmers, Teknisk fysik, Elektronikmaterial

Avgust Yurgens

Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 111 4 044103

Styrkeområden

Nanovetenskap och nanoteknik

Ämneskategorier

Fysik

DOI

10.1063/1.3686135

Mer information

Senast uppdaterat

2020-10-15