Low Partial Pressure Chemical Vapor Deposition of Graphene on Copper
Artikel i vetenskaplig tidskrift, 2012

A systematic study of the Cu-catalyzed chemical vapor deposition of graphene under extremely low partial pressure is carried out. A carbon precursor supply of just P-CH4 similar to 0.009 mbar during the deposition favors the formation of large-area uniform monolayer graphene verified by Raman spectra. A diluted HNO3 solution is used to remove Cu before transferring graphene onto SiO2/Si substrates or carbon grids. The graphene can be made suspended over a similar to 12 mu m distance, indicating its good mechanical properties. Electron transport measurements show the graphene sheet resistance of similar to 0.6 k Omega/square at zero gate voltage. The mobilities of electrons and holes are similar to 1800 cm(2)/Vs at 4.2 K and similar to 1200 cm(2)/Vs at room temperature.

low partial pressure

wet transfer


Chemical vapor deposition



Jie Sun

Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik

Niclas Lindvall

Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik

Matthew Cole

Koh Angel

Teng Wang

Chalmers, Teknisk fysik, Elektronikmaterial

Ken Teo

Daniel Chua

Johan Liu

Chalmers, Teknisk fysik, Elektronikmaterial

Avgust Yurgens

Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik

IEEE Transactions on Nanotechnology

1536-125X (ISSN) 19410085 (eISSN)

Vol. 11 2 255-260 5966348


Nanovetenskap och nanoteknik




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