A New Pillar Geometry for Heterostructure Barrier Varactor Diodes
Paper i proceeding, 2001

We report on a novel diode geometry, with reduced thermal resistance, for Heterostructure Barrier Varactor, HBV, diodes. The pillar geometry presented here involves the complete removal of the substrate, electrical contacted is made by the forward and reverse side processing of metallic pillars. We propose that there is a limit to the maximum number of barriers that can be used to increase the power capability of a HBV. An analytical model has been developed to study these effects. In considering the case of a perfect thermal heat sink the limit is found to be fourteen, in applying this model to the new pillar structure this is reduced to six.



thermal limitations


Byron Alderman

Jan Stake

Institutionen för mikroelektronik

Lars Dillner

Institutionen för mikroelektronik

D.P. Steenson

Mattias Ingvarson

Institutionen för mikroelektronik

Erik Kollberg

Institutionen för mikroelektronik

Chris M. Mann

J.M Chamberlain

12th International Symposium on Space Terahertz Technology



Annan elektroteknik och elektronik

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