Electrical and structural properties of ABO3/SrTiO3 interfaces
Paper i proceeding, 2012

Electrical transport and microstructure of interfaces between nm-thick films of various perovskite oxides grown by pulsed laser deposition (PLD) on TiO2 terminated SrTiO3 (STO) substrates are compared. LaAlO3/STO and KTaO3/STO interfaces become quasi-2DEG after a critical film thickness of 4 unit cell layers. The conductivity survives long anneals in oxygen atmosphere. LaMnO3/STO interfaces remain insulating for all film thicknesses and NdGaO3/STO interfaces are conducting but the conductivity is eliminated after oxygen annealing. Medium-energy ion spectroscopy and scanning transmission electron microscopy detect cationic intermixing within several atomic layers from the interface in all studied interfaces. Our results indicate that the electrical reconstruction in the polar oxide interfaces is a complex combination of different mechanisms, and oxygen vacancies play an important role.

Författare

Alexei Kalaboukhov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Tord Claeson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Pier Paolo Aurino

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Robert Gunnarsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Dag Winkler

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Eva Olsson

Chalmers, Teknisk fysik, Mikroskopi och mikroanalys

Chalmers, Teknisk fysik, Eva Olsson Group

Nikolina Tuzla

Chalmers, Teknisk fysik, Eva Olsson Group

Johan Börjesson

Chalmers, Teknisk fysik, Mikroskopi och mikroanalys

Chalmers, Teknisk fysik, Eva Olsson Group

Yu A. Boikov

Ioffe Institute

I.T. Serenkov

Ioffe Institute

V.I. Sakharov

Ioffe Institute

M. P. Volkov

Ioffe Institute

Materials Research Society Symposium Proceedings

0272-9172 (ISSN)

Vol. 1454 167-172

Ämneskategorier

Fysik

DOI

10.1557/opl.2012.925

ISBN

978-160511431-6