Electrical and structural properties of ABO3/SrTiO3 interfaces
Paper i proceeding, 2012
Electrical transport and microstructure of interfaces between nm-thick films of various perovskite oxides grown by pulsed laser deposition (PLD) on TiO2 terminated SrTiO3 (STO) substrates are compared. LaAlO3/STO and KTaO3/STO interfaces become quasi-2DEG after a critical film thickness of 4 unit cell layers. The conductivity survives long anneals in oxygen atmosphere. LaMnO3/STO interfaces remain insulating for all film thicknesses and NdGaO3/STO interfaces are conducting but the conductivity is eliminated after oxygen annealing. Medium-energy ion spectroscopy and scanning transmission electron microscopy detect cationic intermixing within several atomic layers from the interface in all studied interfaces. Our results indicate that the electrical reconstruction in the polar oxide interfaces is a complex combination of different mechanisms, and oxygen vacancies play an important role.
Författare
Alexei Kalaboukhov
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Tord Claeson
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Pier Paolo Aurino
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Robert Gunnarsson
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Dag Winkler
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Eva Olsson
Chalmers, Teknisk fysik, Mikroskopi och mikroanalys
Chalmers, Teknisk fysik, Eva Olsson Group
Nikolina Tuzla
Chalmers, Teknisk fysik, Eva Olsson Group
Johan Börjesson
Chalmers, Teknisk fysik, Mikroskopi och mikroanalys
Chalmers, Teknisk fysik, Eva Olsson Group
Yu A. Boikov
Russian Academy of Sciences
I.T. Serenkov
Russian Academy of Sciences
V.I. Sakharov
Russian Academy of Sciences
M. P. Volkov
Russian Academy of Sciences
Materials Research Society Symposium Proceedings
0272-9172 (ISSN)
Vol. 1454 167-172978-160511431-6 (ISBN)
Ämneskategorier
Fysik
DOI
10.1557/opl.2012.925
ISBN
978-160511431-6