Study of IF bandwidth of MgB2 phonon-cooled hot-electron bolometer mixers
Artikel i vetenskaplig tidskrift, 2013

A noise bandwidth (NBW) of 6-7 GHz was obtained for Hot-Electron Bolometer (HEB) mixers made of 10 nm MgB2 films. A systematic investigation of the (IF) gain bandwidth as a function of the MgB2 film thickness (30 nm, 15 nm and 10 nm) is also presented. The gain bandwidth (GBW) of 3.4 GHz was measured for a 10 nm film, corresponding to a mixer time constant of 47 ps. For 10 nm films a reduction of the GBW was observed with the reduction of the critical temperature (Tc). Experimental data were analyzed using the two-temperature model. From the theoretical analysis, the electron-phonon time (τe-ph), the phonon escape time (τesc) and the electron and phonon specific heats (ce, cph) were extrapolated giving the first model for HEB mixers of MgB2 films.

terahertz

mixers

HEB

superconductor

Bolometer

gain bandwidth

Författare

Stella Bevilacqua

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Serguei Cherednichenko

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Vladimir Drakinskiy

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Hiroyuki Shibata

Nippon Telegraph and Telephone Corporation

Yasuhiro Tokura

Nippon Telegraph and Telephone Corporation

Jan Stake

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

IEEE Transactions on Terahertz Science and Technology

2156-342X (ISSN)

Vol. 3 409-415 6492160

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik

Ämneskategorier

Elektroteknik och elektronik

Nanoteknik

Infrastruktur

Nanotekniklaboratoriet

DOI

10.1109/TTHZ.2013.2252266