High-Speed Oxide Confined 850-nm VCSELs Operating Error-Free at 40 Gb/s up to 85 degrees C
Artikel i vetenskaplig tidskrift, 2013

We present the temperature dependence of the performance characteristics of our latest generation high-speed oxide confined 850-nm vertical cavity surface-emitting lasers (VCSELs). Using a 7-mu m oxide aperture diameter VCSEL, we demonstrate a maximum modulation bandwidth of similar to 27 GHz at room temperature and similar to 21 GHz at 85 degrees C. With a new highspeed optical receiver, these bandwidths enable error-free data transmission ( defined as a bit-error-rate < 10(-12)) at bit-rates up to 47 Gb/s at room temperature, and up to 40 Gb/s at 85 degrees C.

semiconductor lasers

High-speed modulation

vertical cavity surface-emitting laser

optical interconnects

Författare

Petter Westbergh

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Rashid Safaisini

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Erik Haglund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Johan Gustavsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

M. Geen

Chalmers University of Technology

M. Geen

IQE Europe Ltd.

A. Joel

IQE Europe Ltd.

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

IEEE Photonics Technology Letters

1041-1135 (ISSN)

Vol. 25 768-771

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1109/LPT.2013.2250946