High-Speed Oxide Confined 850-nm VCSELs Operating Error-Free at 40 Gb/s up to 85 degrees C
Journal article, 2013

We present the temperature dependence of the performance characteristics of our latest generation high-speed oxide confined 850-nm vertical cavity surface-emitting lasers (VCSELs). Using a 7-mu m oxide aperture diameter VCSEL, we demonstrate a maximum modulation bandwidth of similar to 27 GHz at room temperature and similar to 21 GHz at 85 degrees C. With a new highspeed optical receiver, these bandwidths enable error-free data transmission ( defined as a bit-error-rate < 10(-12)) at bit-rates up to 47 Gb/s at room temperature, and up to 40 Gb/s at 85 degrees C.

vertical cavity surface-emitting laser

optical interconnects

semiconductor lasers

High-speed modulation

Author

Petter Westbergh

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Rashid Safaisini

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Erik Haglund

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Johan Gustavsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

M. Geen

IQE (Europe) Ltd.

A. Joel

IQE (Europe) Ltd.

IEEE Photonics Technology Letters

1041-1135 (ISSN)

Vol. 25 8 768-771

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/LPT.2013.2250946

More information

Latest update

1/17/2019