Behavioral modeling of outphasing amplifiers considering memory effects
Paper i proceeding, 2013

This paper proposes a behavioral model structure for outphasing amplifiers. The model performance is evaluated on a class-D CMOS outphasing amplifier and compared with two models found in the literature. The proposed model structure also allows the use of memory in a parallel Hammerstein-like setting. The proposed models show improvements in adjacent channel error power ratio (ACEPR) of approximately 5 dB in addition to being linear in the parameters. The lower model errors enable the use and design of improved predistorters taking frequency dependency (memory effects) in outphasing amplifiers into account.

predistortion

Power amplifier

CMOS

nonlinear distortion

Författare

Per Landin

Gigahertzcentrum

Chalmers, Signaler och system, Kommunikations- och antennsystem, Kommunikationssystem

Thomas Eriksson

Chalmers, Signaler och system, Kommunikations- och antennsystem, Kommunikationssystem

Gigahertzcentrum

Jonas Fritzin

Linköpings universitet

Ericsson AB

Atila Alvandpour

Linköpings universitet

IEEE MTT-S International Microwave Symposium Digest

0149645X (ISSN)

1-4 6697764

Ämneskategorier

Signalbehandling

Annan elektroteknik och elektronik

DOI

10.1109/MWSYM.2013.6697764

Mer information

Senast uppdaterat

2018-12-28