Behavioral modeling of outphasing amplifiers considering memory effects
Paper i proceeding, 2013
This paper proposes a behavioral model structure for outphasing amplifiers. The model performance is evaluated on a class-D CMOS outphasing amplifier and compared with two models found in the literature. The proposed model structure also allows the use of memory in a parallel Hammerstein-like setting. The proposed models show improvements in adjacent channel error power ratio (ACEPR) of approximately 5 dB in addition to being linear in the parameters. The lower model errors enable the use and design of improved predistorters taking frequency dependency (memory effects) in outphasing amplifiers into account.
predistortion
Power amplifier
CMOS
nonlinear distortion
Författare
Per Landin
Gigahertzcentrum
Chalmers, Signaler och system, Kommunikation, Antenner och Optiska Nätverk
Thomas Eriksson
Chalmers, Signaler och system, Kommunikation, Antenner och Optiska Nätverk
Gigahertzcentrum
Jonas Fritzin
Linköpings universitet
Ericsson AB
Atila Alvandpour
Linköpings universitet
IEEE MTT-S International Microwave Symposium Digest
0149645X (ISSN)
1-4 6697764Ämneskategorier
Signalbehandling
Annan elektroteknik och elektronik
DOI
10.1109/MWSYM.2013.6697764