Design and characterization of a negative resistance Common Emitter InP Double Heterojunction Bipolar Transistor subcircuit for millimeter wave and submillimeter wave applications
Paper i proceeding, 2014
A negative resistance Indium Phosphide MMIC subcircuit element is presented that employs a Double-Heterojunction Bipolar Transistor in Common Emitter configuration with series feedback. The fabricated MMIC exhibits negative resistance up to 231GHz, this being the highest known frequency at which negative resistance has been measured for a transistor in the Common Emitter configuration. The design methodology is based on a simple equation that accurately predicts the value of series feedback reactance required to generate negative resistance in a transistor. The negative resistance subcircuit described has potential application in a reflection amplifier or negative resistance oscillator, when combined with a suitable resonator.
Författare
C. Poole
University College London (UCL)
I.Z. Darwazeh
University College London (UCL)
Herbert Zirath
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Klas Eriksson
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Dan Kuylenstierna
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Szhau Lai
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014; Fiera di RomaRome; Italy; 6 October 2014 through 9 October 2014
933-936
978-287487035-4 (ISBN)
Ämneskategorier
Annan elektroteknik och elektronik
DOI
10.1109/EuMC.2014.6986589
ISBN
978-287487035-4