Design and characterization of a negative resistance Common Emitter InP Double Heterojunction Bipolar Transistor subcircuit for millimeter wave and submillimeter wave applications
Paper i proceeding, 2014

A negative resistance Indium Phosphide MMIC subcircuit element is presented that employs a Double-Heterojunction Bipolar Transistor in Common Emitter configuration with series feedback. The fabricated MMIC exhibits negative resistance up to 231GHz, this being the highest known frequency at which negative resistance has been measured for a transistor in the Common Emitter configuration. The design methodology is based on a simple equation that accurately predicts the value of series feedback reactance required to generate negative resistance in a transistor. The negative resistance subcircuit described has potential application in a reflection amplifier or negative resistance oscillator, when combined with a suitable resonator.

Författare

C. Poole

University College London (UCL)

I.Z. Darwazeh

University College London (UCL)

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Klas Eriksson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Dan Kuylenstierna

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Szhau Lai

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014; Fiera di RomaRome; Italy; 6 October 2014 through 9 October 2014

933-936

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1109/EuMC.2014.6986589

ISBN

978-287487035-4