Phase-Noise Analysis of an X-Band Ultra-Low Phase-Noise GaN HEMT Based Cavity Oscillator
Artikel i vetenskaplig tidskrift, 2015

This paper reports on an ultra-low phase-noise oscillator based on a GaN HEMT monolithic microwave integrated circuit reflection amplifier and an aluminum cavity resonator. It is experimentally investigated how the oscillator's phase noise depends on the cavity coupling factor, phase matching, and bias condition of the reflection amplifier. For the optimum bias and cavity position phase noise of -145 dBc/Hz and -160 dBc/Hz at offsets of 100 and 400 kHz, respectively, from a 9.9-GHz carrier frequency is reached. This is, to the best of the authors' knowledge, a record in reported performance for any oscillator based on a GaN HEMT device. The optimum performance at 400-kHz offset corresponds to a power normalized figure of merit of 227 and compensating for finite efficiency in the reflection amplifier, the achieved result is within 7 dB from the theoretical noise floor, assuming a linear theory.

oscillator

GaN HEMT

cavity

Phase noise

Författare

Mikael Hörberg

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Thomas Emanuelsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Szhau Lai

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Thi Ngoc Do Thanh

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Dan Kuylenstierna

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 63 8 2619-2629

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/tmtt.2015.2447514