The influence of the gate leakage current and the gate resistance on the noise and gain performances of 90-nm CMOS for micro- and millimeter-wave frequencies
Artikel i vetenskaplig tidskrift, 2004

We report the experimental and theoretical evaluation of the noise and the high frequency gain performances applied to a very short channel 90-nm CMOS transistor. We show that gate leakage currents modify the behavior of the noise parameters Rn, Fmin and Zopt only in the low gigahertz range. The gate resistance, Rg, on the contrary, have influence on the noise performance over the complete frequency range. Noise parameters have been measured in the frequency range 2-26 GHz and the S-parameters have been measured up to 62.5 GHz. The proposed model has been used in the design of a 2-stage 40 GHz amplifier.

Författare

Hans-Olof Vickes

Mattias Ferndahl

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Anowar Masud

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Microwave Symposium Digest , 2004 IEEE MTT-S International

0149-645X (ISSN)

Vol. 2 971-974

Ämneskategorier

Annan elektroteknik och elektronik