A class-J power amplifier with varactor-based dynamic load modulation across a large bandwidth
Paper i proceeding, 2015

A novel class-J operated power amplifier (PA) utilizing varactor-based dynamic load modulation is presented. It is theoretically shown that the proposed PA can maintain high average efficiency across more than 35% RF bandwidth by means of a purely reactive load modulation after the transistor output capacitance. The theory is experimentally verified by a 15 W GaN HEMT PA operating from 1.80 to 2.20 GHz, using SiC varactors as dynamically tunable load elements. In the band, the PA presents a power added efficiency (PAE) higher than 39% at 6 dB output power back-off. For a 3.84 MHz W-CDMA signal with 6.7 dB peak to average power ratio, an average PAE higher than 39% and an adjacent channel leakage ratio below -45.8 dBc are obtained across the entire band after linearization.

varactors

power amplifiers

wideband

silicon carbide (SiC)

gallium nitride (GaN)

Energy efficiency

Författare

William Hallberg

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

David Gustafsson

Ericsson Sweden

MUSTAFA ÖZEN

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Christer Andersson

Mitsubishi Electric Corporation

Dan Kuylenstierna

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Christian Fager

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

2015 IEEE MTT-S International Microwave Symposium, IMS 2015

7166734

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/MWSYM.2015.7166734

ISBN

978-1-4799-8275-2

Mer information

Skapat

2017-10-08