High-Speed VCSELs with Strong Confinement of Optical Fields and Carriers
Artikel i vetenskaplig tidskrift, 2016

We present the design, fabrication, and performance of our latest generation high-speed oxide-confined 850-nm verticalcavity surface-emitting lasers. Excellent high-speed properties are obtained by strong confinement of optical fields and carriers. Highspeed modulation is facilitated by using the shortest possible cavity length of one half wavelength and placing oxide apertures close to the active region to efficiently confine charge carriers. The resulting strong current confinement boosts internal quantum efficiency, leading to low threshold currents, high wall-plug efficiency, and state-of-the-art high-speed properties at low bias currents. The temperature dependent static and dynamic performance is analyzed by current-power-voltage and small-signal modulation measurements.

semiconductor lasers

high efficiency

vertical-cavity surface-emitting lasers (VCSELs)

Dynamics

high-speed modulation

optical interconnects

Författare

Erik Haglund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Petter Westbergh

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Johan Gustavsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Emanuel Haglund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Journal of Lightwave Technology

0733-8724 (ISSN)

Vol. 34 2 269-277 7163496

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik

Ämneskategorier

Telekommunikation

Infrastruktur

Nanotekniklaboratoriet

DOI

10.1109/jlt.2015.2458935

Mer information

Skapat

2017-10-08